The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Dec. 11, 2003
Kenji Obara, Ebina, JP;
Yuji Takagi, Kamakura, JP;
Hisae Shibuya, Chigasaki, JP;
Naoki Hosoya, Yokohama, JP;
Kenji Obara, Ebina, JP;
Yuji Takagi, Kamakura, JP;
Hisae Shibuya, Chigasaki, JP;
Naoki Hosoya, Yokohama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.