The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Sep. 26, 2003
Han-ti Hsiaw, Daliao Township, Kaohsiung County, TW;
Shwang-ming Jeng, Hsin-chiu, TW;
Shih-ming Wang, Tainan, TW;
Fu-chi Hsu, Sinyuan Township, Pingtung County, TW;
Han-Ti Hsiaw, Daliao Township, Kaohsiung County, TW;
Shwang-Ming Jeng, Hsin-chiu, TW;
Shih-Ming Wang, Tainan, TW;
Fu-Chi Hsu, Sinyuan Township, Pingtung County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
An ILD dielectric layer stack and method for forming the same, the method includes a semiconductor substrate including CMOS transistors with gate electrode portions; depositing a first layer including phosphorous doped SiOover the semiconductor substrate to a thickness sufficient to cover the gate electrode portions including intervening gaps; depositing a second layer of undoped SiOover and contacting the first layer to a thickness sufficient to leave a second layer thickness portion overlying the first layer following a subsequent oxide chemical mechanical polish (CMP) planarization process; carrying out the oxide CMP process to planarize the second layer and leave the second layer thickness portion; and forming metal filled local interconnects extending through a thickness portion of the first and second layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile