The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2005

Filed:

Jul. 13, 2001
Applicants:

Thomas Nowak, Cupertino, CA (US);

Ian Latchford, Sunnyvale, CA (US);

Tsutomu Tanaka, Santa Clara, CA (US);

Bok Heon Kim, San Jose, CA (US);

Ping Xu, Fremont, CA (US);

Jason Foster, Santa Clara, CA (US);

Heath B. Deshong, Livermore, CA (US);

Martin Seamons, San Jose, CA (US);

Inventors:

Thomas Nowak, Cupertino, CA (US);

Ian Latchford, Sunnyvale, CA (US);

Tsutomu Tanaka, Santa Clara, CA (US);

Bok Heon Kim, San Jose, CA (US);

Ping Xu, Fremont, CA (US);

Jason Foster, Santa Clara, CA (US);

Heath B. DeShong, Livermore, CA (US);

Martin Seamons, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B006/00 ; H01L021/306 ;
U.S. Cl.
CPC ...
Abstract

Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.


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