The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Oct. 05, 2002
Shyue-sheng LU, Hsin-Chu, TW;
Hong-yuan Chu, Taichung, TW;
Kuei-shun Chen, Hsin-Chu, TW;
Hua-tai Lin, Yu-Kang, TW;
Shyue-Sheng Lu, Hsin-Chu, TW;
Hong-Yuan Chu, Taichung, TW;
Kuei-Shun Chen, Hsin-Chu, TW;
Hua-Tai Lin, Yu-Kang, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A new and improved method for measuring dimensions of a photoresist pattern profile on a wafer substrate during photolithography for the fabrication of integrated circuits on the substrate. According to one embodiment, the method includes fixing the photoresist pattern profile on the substrate using a spin-on glass (SOG) procedure. In another embodiment, the method includes fixing the photoresist pattern profile on the substrate using a sputter oxide (SO) procedure. The fixed photoresist pattern is then subjected to a microscopy procedure, typically transmission electron microscopy (TEM), to measure the exact linewidth and other dimensions of the profile. The method prevents distortion of the profile during fixation and facilitates an accurate determination of the profile dimensions.