The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6851597 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 08, 2005

Filed:

Aug. 05, 2002
Applicants:

David R. Hembree, Boise, ID (US);

Michael E. Hess, Kuna, ID (US);

John O. Jacobson, Boise, ID (US);

Warren M. Farnworth, Nampa, ID (US);

Alan G. Wood, Boise, ID (US);

Inventors:

David R. Hembree, Boise, ID (US);

Michael E. Hess, Kuna, ID (US);

John O. Jacobson, Boise, ID (US);

Warren M. Farnworth, Nampa, ID (US);

Alan G. Wood, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K020/10 ; B23K031/02 ;
U.S. Cl.
CPC ...
Abstract

A machine and method for bonding puncture-type conductive contact members of an interconnect to the bond pads of a bare semiconductor die includes the use of one or two ultrasonic vibrators mounted to vibrate one or both of the die and interconnect. A short axial linear burst of ultrasonic energy enables the contact members to pierce hard oxide layers on the surfaces of the bond pads at a much lower compressive force and rapidly achieve full penetration depth.


Find Patent Forward Citations

Hembree, David. (2005). Utilize ultrasonic energy to reduce the initial contact forces in known-good-die or permanent contact systems (U.S. Patent No. 6851597). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6851597

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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