The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Jun. 04, 2003
Ronald A. Weimer, Boise, ID (US);
Yongjun Jeff HU, Boise, ID (US);
Pai Hung Pan, Boise, ID (US);
Deepa Ratakonda, Boise, ID (US);
James Beck, Meridian, ID (US);
Randhir P. S. Thakur, Capertino, CA (US);
Ronald A. Weimer, Boise, ID (US);
Yongjun Jeff Hu, Boise, ID (US);
Pai Hung Pan, Boise, ID (US);
Deepa Ratakonda, Boise, ID (US);
James Beck, Meridian, ID (US);
Randhir P. S. Thakur, Capertino, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.