The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
May. 21, 2003
Thomas Feudel, Radebeul, DE;
Manfred Horstmann, Dresden, DE;
Karsten Wieczorek, Dresden, DE;
Stephan Kruegel, Boxdorf, DE;
Thomas Feudel, Radebeul, DE;
Manfred Horstmann, Dresden, DE;
Karsten Wieczorek, Dresden, DE;
Stephan Kruegel, Boxdorf, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
According to one illustrative embodiment of the present invention, a method of forming a field effect transistor includes the formation of a doped high-k dielectric layer above a substrate including a gate electrode formed over an active region and separated therefrom by a gate insulation layer. A heat treatment is carried out with the substrate to diffuse dopants from the high-k dielectric layer into the active region to form extension regions. The high-k dielectric layer is patterned to form sidewall spacers at sidewalls of the gate electrode and an implantation process is carried out with the sidewall spacers as implantation mask to form source and drain regions.