The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2005

Filed:

Aug. 01, 2002
Applicants:

Martin Dauelsberg, Aachen, DE;

Marcus Schumacher, Kerpen, DE;

Holger Juergensen, Aachen, DE;

Gerd Strauch, Aachen, DE;

Piotr Strzyzewski, Herzogenrath-Kohlscheid, DE;

Inventors:

Martin Dauelsberg, Aachen, DE;

Marcus Schumacher, Kerpen, DE;

Holger Juergensen, Aachen, DE;

Gerd Strauch, Aachen, DE;

Piotr Strzyzewski, Herzogenrath-Kohlscheid, DE;

Assignee:

Aixtron AG., , DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2502 ; C30B 2504 ;
U.S. Cl.
CPC ...
Abstract

The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Published as:
WO0157289A1; AU4236301A; WO0157289B1; EP1252363A1; KR20020089341A; US2003056720A1; JP2003525349A; EP1252363B1; ATE249532T1; DE50100603D1; US6849241B2; TWI289611B; KR100780143B1; JP4778655B2;

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