The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Oct. 05, 2002
Yen-hsing Chen, Nantou, TW;
Hsing-jui Lee, Hsin Chu, TW;
Fu-kuo Tseng, Junghe, TW;
Ching-ling Lee, Hsinchu, TW;
Kuo-hung Liao, Hsin-Chu, TW;
Yen-Hsing Chen, Nantou, TW;
Hsing-Jui Lee, Hsin Chu, TW;
Fu-Kuo Tseng, Junghe, TW;
Ching-Ling Lee, Hsinchu, TW;
Kuo-Hung Liao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A truncated dummy plate which is suitable for promoting substantially uniform flow of process gases among all regions on the surface of a substrate to facilitate deposition of a film having uniform thickness on the substrate. The truncated dummy plate has a circular shape with a flat edge provided in the curved edge of the dummy plate. At least two, and preferably, about three or four of the dummy plates are positioned in the sites on a wafer boat which are in relatively close proximity to a gas outlet in a process furnace typically during a LPCVD process carried out in the furnace. The flat or truncated edges of the dummy plates are disposed on the gas inlet side of the process chamber, with the round edges of the dummy plates disposed on the gas outlet side of the process chamber.