The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jul. 30, 2002
Applicants:
Osamu Nozawa, Fuchu, JP;
Hideaki Mitsui, Fuchu, JP;
Laurent Dieu, Austin, TX (US);
Inventors:
Assignees:
Hoya Corporation, Tokyo, JP;
Dupont Photomasks, Inc., Round Rock, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 900 ; B32B 1500 ;
U.S. Cl.
CPC ...
Abstract
A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300° C. or higher.