The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Mar. 20, 2001
Wilfried Von Ammon, Hochburg/Ach, AT;
Rüdiger Schmolke, Burghausen, DE;
Erich Daub, Emmerting, DE;
Christoph Frey, Burghausen, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
Rüdiger Schmolke, Burghausen, DE;
Erich Daub, Emmerting, DE;
Christoph Frey, Burghausen, DE;
Siltronic AG, Munich, DE;
Abstract
A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*10atcmand greater than 1*10atcm. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.