The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Dec. 18, 2002
Chih-tien Chang, Hsinchu, TW;
Hsueh-chang Wu, Taipei, TW;
Sunny Wu, Yunlin, TW;
Chien-ling Huang, Hsin-Chu, TW;
Chin-hsin Peng, Hsin-Chu, TW;
Mei-seng Zhou, Singapore, SG;
Chih-Tien Chang, Hsinchu, TW;
Hsueh-Chang Wu, Taipei, TW;
Sunny Wu, Yunlin, TW;
Chien-Ling Huang, Hsin-Chu, TW;
Chin-Hsin Peng, Hsin-Chu, TW;
Mei-Seng Zhou, Singapore, SG;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A new and improved, multi-phase pressure control valve for facilitating quick and accurate attainment and stabilization of gas pressure inside a semiconductor fabrication process chamber such as an etch chamber or CVD chamber. In one embodiment, the multi-phase pressure control valve is a butterfly-type valve which includes outer and inner vanes that independently control flow of gases from a process chamber to a vacuum pump. The larger-diameter outer vane stabilizes gas pressures within a large range, whereas the inner vane stabilizes pressure within a smaller range. In another embodiment, the multi-phase pressure control valve is a gate-type valve which may include a pivoting outer vane and an inner vane slidably disposed with respect to the outer vane for exposing a central gas flow opening in the outer vane.