The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2005

Filed:

Jan. 03, 2002
Applicants:

Yeong-song Yen, Taipei, TW;

I-hsiung Huang, Kaohsiung, TW;

Jiunn-ren Hwang, Hsin-Chu, TW;

Kuei-chun Hung, Hsin-Chu, TW;

Ching-hsu Chang, Yuan-Lin, TW;

Inventors:

Yeong-Song Yen, Taipei, TW;

I-Hsiung Huang, Kaohsiung, TW;

Jiunn-Ren Hwang, Hsin-Chu, TW;

Kuei-Chun Hung, Hsin-Chu, TW;

Ching-Hsu Chang, Yuan-Lin, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 2774 ; G03B 2742 ; G03B 2754 ;
U.S. Cl.
CPC ...
Abstract

A photolithography process with multiple exposures is provided. A photomask is placed and aligned above a wafer having a photoresist formed thereon at a predetermined distance. Multiple exposures are sequentially performed on the photoresist through the photomask. Each of the multiple exposures is provided with a respective illuminating setting that is optimized for one duty ratio of the photomask. Thereby, an optimum through-pitch performance for pattern transfer from the photomask unto the photoresist is obtained. Then, a development is performed on the photoresist.


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