The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Sep. 23, 2003
Joyce C. Liu, Carmel, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Richard S. Wise, New Windsor, NY (US);
Hongwen Yan, Somers, NY (US);
Bidan Zhang, LaGrangeville, NY (US);
Joyce C. Liu, Carmel, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Richard S. Wise, New Windsor, NY (US);
Hongwen Yan, Somers, NY (US);
Bidan Zhang, LaGrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for reducing line edge roughness (LER) of a semiconductor gate structure includes patterning a photoresist layer formed over an oxide hardmask layer. The photoresist layer is etched so as to transfer a photoresist pattern to the oxide hardmask layer, the photoresist pattern having an initial LER. The exposed surfaces of the oxide hardmask are etched with a chemical oxide removal (COR) so as to form a reaction product on the exposed surfaces, wherein concave portions of the exposed surfaces are etched at a reduced rate with respect to convex portions of the exposed surfaces.