The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6838116 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 04, 2005

Filed:

Nov. 20, 2003
Applicants:

Don-gey Liu, Taichung, TW;

Tsong-jen Yang, Taichung, TW;

Chin-hao Yang, Taipei, TW;

Wen Luh Yang, Taichung, TW;

Giin-shan Chen, Taichung, TW;

Inventors:

Don-Gey Liu, Taichung, TW;

Tsong-Jen Yang, Taichung, TW;

Chin-Hao Yang, Taipei, TW;

Wen Luh Yang, Taichung, TW;

Giin-Shan Chen, Taichung, TW;

Assignee:

Feng Chia University, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 512 ; C25D 554 ;
U.S. Cl.
CPC ...
Abstract

A solvent, such as deionized water, is heated up to boil to remove the oxygen dissolved in the water before preparing the plating solutions for the growth of copper interconnects. The resistance of the copper grown from the EDD solutions having undergone the oxygen-removing process is greatly improved, down to a value very close to copper's ideal value.


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Liu, Don-Gey. (2005). Oxygen-removing pre-process for copper interconnect grown by electrochemical displacement deposition (U.S. Patent No. 6838116). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6838116

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