The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2004

Filed:

Apr. 26, 2002
Applicant:
Inventors:

Chung-Hsiu Cheng, Banchiau, TW;

Pin-Yi Hsin, Hsin-Chu, TW;

Ming-Chyi Liu, Hsin-Chu, TW;

Chih-Hsien Hsu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 ;
U.S. Cl.
CPC ...
G03F 7/26 ;
Abstract

A deep ultraviolet (UV) light-resistant photoresist plug for via holes, as may be used in damascene, dual-damascene, and other types of semiconductor fabrication processing, is disclosed. A via hole of a semiconductor wafer is partially plugged with non-photosensitive photoresist, such as negative photoresist. The via hole and the wafer are then coated with a deep UV light-sensitive photoresist. The deep UV light-sensitive photoresist is exposed to deep UV light, such as 193 nanometer (nm) wavelength light, where the non-photosensitive photoresist is unresponsive to the deep UV light. The wafer is then developed to selectively remove the deep UV light-sensitive photoresist, where the non-photosensitive photoresist substantially remains.


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