The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Dec. 26, 2001
Applicant:
Inventors:
Katsuya Hayano, Akishima, JP;
Norio Hasegawa, Hinode, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ; G03F 9/00 ;
U.S. Cl.
CPC ...
G03C 5/00 ; G03F 9/00 ;
Abstract
Disclosed is a technique capable of reducing the manufacturing time of a photomask. In a method of transferring a predetermined pattern onto a semiconductor wafer by reduced projection exposure using a product mask manufactured by performing the reduced projection exposure to a pattern of an IP mask Mm , the IP mask Mm is designed to have a resist mask structure in which a light-shielding pattern thereof is constituted of an organic film such as a resist film.
Hayano, Katsuya. (2004). Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device (U.S. Patent No. 6824958). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6824958
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile