The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Sep. 10, 2003
Applicant:
Inventors:
Nian Yang, San Jose, CA (US);
Zhigang Wang, Santa Clara, CA (US);
Hyeon-seag Kim, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A floating gate flash memory device including a substrate including a source region, a drain region and a channel region positioned therebetween; a stack gate including a floating gate electrode, at least one of sidewall/spacers, second sidewalls or a barrier layer, in which the floating gate is positioned above the channel region. The floating gate may be separated from the channel region by one or more of a reverse tunnel dielectric layer, the barrier layer and a pad dielectric layer. The floating gate may be a metal floating gate.