The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2004

Filed:

May. 01, 2002
Applicant:
Inventors:

Frank Mauersberger, Radebeul, DE;

Peter J. Beckage, Austin, TX (US);

Paul R. Besser, Sunnyvale, CA (US);

Frederick N. Hause, Austin, TX (US);

Errol Todd Ryan, Austin, TX (US);

William S. Brennan, Austin, TX (US);

John A. Iacoponi, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

In another aspect of the present invention, a system for detecting an endpoint in a polishing process is provided. The system comprises a polishing tool, a controllable light source, a sensor, and a controller. The polishing tool is capable of polishing a surface of a semiconductor device, wherein the semiconductor device includes a first layer comprised of a first material and a second layer comprised of a second material. The first layer is positioned above the second layer. The controllable light source is capable of delivering light having one of a plurality of a preselected frequencies to the surface of the semiconductor device. The sensor is capable of detecting the light reflected from the surface of the semiconductor device. The controller is capable of determining the second material, instructing the controllable light source to deliver light of one of the frequencies in response to the second material, comparing the reflected light to a preselected setpoint, and modifying the polishing process in response to the reflected light exceeding the preselected setpoint.


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