The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2004

Filed:

Aug. 25, 2003
Applicant:
Inventors:

Hiroshi Shinriki, Nirasaki, JP;

Koji Homma, Kodaira, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; C23C 1/600 ;
U.S. Cl.
CPC ...
H01L 2/131 ; C23C 1/600 ;
Abstract

A substrate processing apparatus consists of: a processing container; a first processing gas supply unit and a second processing gas supply unit, countering each other, prepared on both sides of a substrate-to-be-processed to the processing container; and a first slit-shaped exhaust opening and a second slit-shaped exhaust opening provided one on each side of the substrate-to-be-processed approximately perpendicular to the flow of the first processing gas and the second processing gas, countering the first processing gas supply unit and the second processing gas supply unit, respectively. The first processing gas is passed along the surface of the substrate-to-be-processed from the first processing gas supply unit to the first exhaust opening, and is adsorbed by the surface of the substrate-to-be-processed. Then, the second processing gas is passed along the surface of the substrate-to-be-processed from the second processing gas supply unit to the second exhaust opening, the second processing gas reacts with molecules of the first processing gas previously adsorbed, and a high dielectric film of a single-molecule layer is formed.


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