The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Apr. 10, 2002
Hichem M'Saad, Santa Clara, CA (US);
Dana Tribula, Palo Alto, CA (US);
Manoj Vellaikal, Santa Clara, CA (US);
Farhad Moghadam, Saratoga, CA (US);
Sameer Desai, San Francisco, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH ), silicon tetrafluoride (SiF ), oxygen (O ) and argon (Ar) are used as the reactant gases. SiH , SiF , and O react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH with the SiF tends to mitigate the destructive effects of SiF throughout most of the deposition. By removing the SiH from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.