The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Dec. 05, 2001
Applicant:
Inventors:
Hsin-Ching Shih, Changhua, TW;
Yi-Nien Su, Kaohsiung, TW;
Li-Te S. Lin, Hsin-chu, TW;
Li-Chie Chiao, Yang-mei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1301 ;
U.S. Cl.
CPC ...
H01L 2/1301 ;
Abstract
A new method is provided for the removal of polymer, possibly mixed with copper oxide residue, from exposed surfaces after an etch stop layer has been removed. The exposed surfaces are treated with a first plasma etch followed by a DI water rinse after which a second plasma etch of the exposed surfaces is performed. By selecting the chemistry and the conditions for the first and the second plasma etch, polymer residues and formed copper oxide residues are removed from the exposed surfaces.