The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Sep. 04, 2002
Applicant:
Inventors:
Junji Noguchi, Ome, JP;
Naofumi Ohashi, Hanno, JP;
Kenichi Takeda, Tokorozawa, JP;
Tatsuyuki Saito, Ome, JP;
Hizuru Yamaguchii, Akishima, JP;
Nobuo Owada, Ome, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
After formation of Cu interconnections to each to be embedded in an interconnection groove of a silicon oxide film by CMP and then washing, the surface of each of the silicon oxide film and Cu interconnections to is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.