The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Dec. 20, 2002
Chih Sieh Teng, San Jose, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Chin-Miin Shyu, San Jose, CA (US);
Fu-Cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An IGFET ( or ) has a channel zone ( or ) situated in body material ( ). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones ( and or and ) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 &mgr;m deep into the body material but not more than 0.1 &mgr;m deep into the body material. The source/drain zones ( and or and ) of a p-channel IGFET ( or ) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.