The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Jul. 07, 2003
Nicholas H. Tripsas, San Jose, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Uzodinma Okoroanyanwu, Mountain View, CA (US);
Angela T. Hui, Fremont, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Sergey D. Lopatin, Santa Clara, CA (US);
Minh Van Ngo, Fremont, CA (US);
Ashok M. Khathuria, San Jose, CA (US);
Mark S. Chang, Los Altos, CA (US);
Patrick K. Cheung, Sunnyvale, CA (US);
Jane V. Oglesby, Mountain View, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.