The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Aug. 29, 2001
Applicant:
Inventors:
Jane-Bai Lai, Hsin-Chu, TW;
Pei-Fen Chou, Hsin-Chu, TW;
Assignee:
Taiwan SEmiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; C09K 1/300 ; C09K 1/304 ; C09K 1/308 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; C09K 1/300 ; C09K 1/304 ; C09K 1/308 ;
Abstract
A method of etching a low dielectric constant material with an aqueous solution of hydrofluoric acid and hydrochloric acid. The etching solution is particularly useful on low dielectric constant materials that are water repulsive or hydrophobic. The weight ratio of hydrofluoric acid to hydrochloric acid in the aqueous solution ranges from 1:3 to 4:1.