The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Dec. 31, 2002
Applicant:
Inventors:
Assignee:
Winbond Electronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
This application is about a method for removing the deep trench Si-needles on a wafer. The method includes steps of forming a photoresist layer on a frontside surface of the wafer, removing a specific area of the photoresist layer for exposing the Si-needles, proceeding a first etching and a second etching, and finally removing the photoresist layer on the frontside surface of the wafer. The first etching is a wet etching for removing the Si-needles by an etching solution etching from a backside surface of the wafer back to the frontside surface of the wafer. And, the second etching is a dry etching for removing the residual silicon nitride (SiN) slices formed during the first etching.