The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Feb. 12, 2001
Applicant:
Inventors:
Rao V. Annapragada, Union City, CA (US);
Ian J. Morey, Singapore, SG;
Chok W. Ho, Milpitas, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
Abstract
Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.