The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Apr. 25, 2002
Jeffrey A. Babcock, Neufahrn, DE;
Gregory E Howard, Dallas, TX (US);
Angelo Pinto, Munich, DE;
Phillipp Steinmann, Munich, DE;
Scott G. Balster, Munich, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
High-voltage bipolar transistors ( ) in silicon-on-insulator (SOI) integrated circuits are disclosed. In one disclosed embodiment, an collector region ( ) is formed in epitaxial silicon ( ) disposed over a buried insulator layer ( ). A base region ( ) and emitter ( ) are disposed over the collector region ( ). Buried collector region ( ) are disposed in the epitaxial silicon ( ) away from the base region ( ). The transistor may be arranged in a rectangular fashion, as conventional, or alternatively by forming an annular buried collector region ( ). According to another disclosed embodiment, a high voltage transistor ( ) includes a central isolation structure ( ), so that the base region ( ) and emitter region ( ) are ring-shaped to provide improved performance. A process for fabricating the high voltage transistor ( ) simultaneously with a high performance transistor ( ) is also disclosed.