The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Dec. 05, 2001
Renesas Technology Corporation, Tokyo, JP;
Abstract
The invention provides a method of producing a semiconductor device conforming to plural supply voltage specifications without increasing the chip size and the production cost, while the device achieves a high-speed performance. The method includes plural processes for forming plural types of MOS transistors supplied with different power supply voltages in correspondence with external power supply voltages, which are comprised of a first process common to the plural types of MOS transistors, a second process following the first process, which is different by each of the plural types of MOS transistors, and a third process following the second process, which is common to the plural types of MOS transistors.