The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jul. 02, 2002
Tsu Shih, Hsin-Chu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for avoiding processing damage to an anisotropically etched damascene feature in a reworking process including providing a first photoresist layer over a first anisotropically etched opening the first photoresist layer photolithographically patterned for forming a second anisotropically etched opening overlying the first anisotropically etched opening; blanket depositing a flowable resinous polymeric material to form a resinous layer over the first photoresist layer in a reworking process to include filling a remaining portion of the first anisotropically etched opening; removing the resinous layer and the first photoresist layer in a planarizing process to reveal an upper substrate surface; and, depositing a second photoresist layer over the upper substrate surface for photolithographic patterning of the second anisotropically etched opening overlying the first anisotropically etched opening in the reworking process.