The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Feb. 05, 2001
Tokyo Electron Limited, Tokyo, JP;
Abstract
A lower electrode with the temperature at its mounting surface set at 40° C. is provided inside a processing chamber of an etching apparatus . After a wafer W is placed on the lower electrode , a processing gas with its gas composition and gas flow rate expressed as C F : CH F : Ar=7:4:500 (sccm) is induced into the processing chamber while sustaining the pressure of the atmosphere inside the processing chamber at 50 (mTorr). High-frequency power at 1500 (W) with the frequency at 13.56 (MHz) is applied to the lower electrode to generate plasma. With the plasma thus generated, a carbon film is formed at shoulder of an SiN film layer exposed inside a contact hole and, at the same time, accumulation of carbon at the bottom of the contact hole is prevented, to form a contact hole achieving a high aspect ratio while preventing damage to the SiN film layer.