The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Jan. 22, 2003
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
The present invention provides, in one embodiment, a method of forming a metal layer over a semiconductor wafer. The method includes the chemical reduction of copper oxide ( ) over the deposited copper seed layer ( ) by exposure to a substantially copper-free reducing agent solution ( ), such that the copper oxide ( ) is substantially converted to elemental copper, followed by electrochemical deposition of a second copper layer ( ) over the copper seed layer ( ). Such methods and resulting conductive structures thereof may be advantageously used in methods to make integrated circuits comprising interconnection metal lines.