The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jul. 19, 2000
Pin-Chin Connie Wang, Menlo Park, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Amit P. Marathe, Milpitas, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device and a device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has a channel opening, a barrier layer lining the channel opening, and a conductor core filling the channel opening. The barrier layer has a more negative heat of formation than the channel dielectric layer whereby the barrier layer is reacts with and forms a barrier to diffusion of the material of the conductor core to the channel dielectric layer. The barrier layer also forms a stable compound with the conductor core to form a coherent barrier layer bonding the channel dielectric to the conductor core.