The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Jun. 30, 1999
Applicant:
Inventors:
Ian J. Morey, San Jose, CA (US);
Susan Ellingboe, Fremont, CA (US);
Janet M. Flanner, Union City, CA (US);
Christine M. Janowiak, Fremont, CA (US);
John Lang, Milpitas, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1483 ;
U.S. Cl.
CPC ...
H01L 2/1483 ;
Abstract
Techniques for etching through a low capacitance dielectric layer in a plasma processing chamber are disclosed. The techniques uses an etch chemistry that includes N , O , and a hydrocarbon. By etching the low capacitance dielectric layer with a plasma created out of the etch chemistry, fast etch rates can be obtained while also maintaining profile control and preserving critical dimension of the resultant opening (e.g., via/trench) being etched in the low capacitance layer.