The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Aug. 28, 2002
Applicant:
Inventors:
Kung-Yi Chen, Hsinchu, TW;
Wei-Ming Chen, Hsinchu, TW;
Shu-Ling Ku, Hsinchu, TW;
Mao-I Ting, Hsinchu, TW;
Lien-Che Ho, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/64 ;
U.S. Cl.
CPC ...
G06K 9/64 ;
Abstract
A method of deleting repeating defects having no effect on product yield of a wafer so that true defects on the wafer are more readily found. A wafer having a plurality of dies thereon is provided. The wafer is scanned to find any repeating defects. If the repeating defects have no effect on the product yield, the area around the repeating defects is marked out as “don't care” region. Another wafer scanning operation to find the true defects is subsequently conducted by scanning the region outside the “don't care” region.