The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Oct. 22, 2002
Kuo-Chyuan Tzeng, Hsin-chu, TW;
Dennis J. Sinitsky, Hsin-chu, TW;
Chen-Jong Wang, Hsin-chu, TW;
Wen-Chaun Chiang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A random access memory cell and a method for fabrication thereof provide a field effect transistor device laterally adjoining a metal oxide semiconductor capacitor device, each formed within an active region of a semiconductor substrate. Within the random access memory cell and method: (1) a single fluorinated silicon oxide layer of a single thickness serves as both a gate dielectric layer within the field effect transistor device and a capacitor dielectric layer within the metal oxide semiconductor capacitor device; and (2) a channel region within the field effect transistor device has a different threshold voltage adjusting dopant concentration in comparison with a semiconductor plate region within the metal oxide semiconductor capacitor device. The random access memory cell is fabricated with enhanced performance.