The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Jul. 03, 2002
Applicant:
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
Methods of forming thin nitride dielectric layers for semiconductor devices are provided. Additionally, methods of forming capacitor structures utilizing thin nitride dielectric layers are provided. The thin nitride layers are formed by nitridizing the surface of a doped or undoped semiconductor substrate using a remote plasma nitridization or a rapid thermal nitridization to form a first growth of silicon nitride. A self-limiting second growth of silicon nitride is formed using a remote plasma nitridization. The resulting silicon nitride layers exhibit improved dielectric and leakage characteristics.