The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2003

Filed:

Nov. 01, 2002
Applicant:
Inventors:

Larry Clevenger, LaGrangeville, NY (US);

Stanley J. Klepeis, Poughkeepsie, NY (US);

Hsiao-Ling Lu, Hsin-Chu, TW;

Jeffrey R. Marino, Fishkill, NY (US);

Andrew Herbert Simon, Fishkill, NY (US);

Yun-Yu Wang, Poughquag, NY (US);

Kwong Hon Wong, Wappingers Falls, NY (US);

Chih-Chao Yang, Beacon, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/940 ;
Abstract

In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.


Find Patent Forward Citations

Loading…