The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Jan. 14, 2002
Bor-Wen Chan, Hsin Chu, TW;
Yu-I Wang, Taichung, TW;
Chen-Yuan Hsu, Hsin Chu, TW;
Hun-Jan Tao, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for fabricating a split gate field effect transistor (FET) device there is employed a two step etch method for forming a floating gate electrode. Within the two step etch method there is employed a patterned first masking layer and a blanket second masking layer to assist in providing the floating gate electrode with a sharply pointed tip within at least either an upper edge of the floating gate electrode or sidewall of the floating gate electrode. The sharply pointed tip provides the split gate field effect transistor (FET) device with enhanced data erasure performance.