The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Oct. 01, 2001
Paul J. Rudeck, Boise, ID (US);
Kelly T. Hurley, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used during the formation of a semiconductor device such as a flash memory device includes the steps of forming a floating gate layer over a semiconductor wafer substrate then forming a first oxide layer over the floating gate layer. An oxidation-resistant layer such as a nitride layer is formed over the first oxide layer wherein a first portion of the oxidation-resistant layer oxidizes more readily than a second portion of the oxidation-resistant layer. To accomplish this the first portion of the oxidation-resistant layer can be formed to have a higher silicon concentration than the second portion. The first portion of the oxidation-resistant layer is oxidized to form a second oxide layer and a control gate layer is formed over the second oxide layer. An in-process semiconductor device is also described.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile