The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Feb. 26, 2001
Applicant:
Inventors:

Marie Angelopoulos, Cortlandt Manor, NY (US);

Katherina E. Babich, Chappaqua, NY (US);

Cameron James Brooks, Elmsford, NY (US);

S. Jay Chey, Ossining, NY (US);

C. Richard Guarnieri, Somers, NY (US);

Michael Straight Hibbs, Westford, VT (US);

Kenneth Christopher Racette, Fairfax, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; H01F 1/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; H01F 1/00 ;
Abstract

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.


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