The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Jan. 02, 2002
Applicant:
Inventors:
Ming-Huei Lui, Sen-Kan, TW;
Mei-Hui Sung, Sen-Kan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; B08B 6/00 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; B08B 6/00 ;
Abstract
An improved and new process for photoresist stripping for use during fabrication of semiconductor integrated circuits, which use porous low-k dielectric materials, such as OSG or HSQ, as the interlevel and intra-level insulating layers, has been developed. Photoresist stripping in microwave or rf generated plasmas in gaseous mixtures of NH and CO takes place without attack or damage to underlying layers of OSG or HSQ. Optimum results are obtained when the ratio of CO to NH is between about 0.8 and 1.2.