The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Oct. 18, 2001
Juing-Yi Cheng, Chi Shange, TW;
Kevin Su, Jubei, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming shallow trench isolation using CMP is described. A pad oxide layer is grown overlying a silicon semiconductor substrate. A polysilicon layer and a nitride layer are deposited. Trenches are etched through the nitride layer, polysilicon layer, and pad oxide layer into the silicon semiconductor substrate and filled with an oxide layer. A silicon oxynitride layer is deposited overlying the oxide layer. A first polishing is performed to polish away the silicon oxynitride layer and oxide layer using a first slurry having high selectivity of oxide to nitride. A second polishing is performed to polish away the oxide layer using a second slurry having a low selectivity of oxide to nitride. The nitride layer is removed and a third polishing is performed to planarize the oxide layer using a third slurry having high selectivity of oxide to polysilicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile