The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Jul. 14, 2000
Applicant:
Inventors:
San-De Tzu, Taipei, TW;
Tsung-Hou Lee, Taipei, TW;
Chih-Hsiung Lee, Hsin-Chu, TW;
Gwo Yuh Shiau, Hsin-Chu, TW;
Ching-sen Kuo, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 ; H01L 2/100 ;
U.S. Cl.
CPC ...
G03F 7/00 ; H01L 2/100 ;
Abstract
A new method is provided for the creation of densely patterned interconnect lines. As a first step of the invention, the mask layout is modified such that the ratio of line width (L) to line spacing (S) is sharply decreased. The line pattern that is created using this mask reflects the same sharp reduction in the ratio L/S. The width of the thus created lines is, as a second step of the invention, increased by the process of thermal flow while the spacing between the lines is concurrently decreased by the same amount.