The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Oct. 30, 2000
Kosuke Inoue, Fujisawa, JP;
Hiroyuki Tenmei, Yokohama, JP;
Yoshihide Yamaguchi, Fujisawa, JP;
Noriyuki Oroku, Yokohama, JP;
Hiroshi Hozoji, Yokohama, JP;
Shigeharu Tsunoda, Fujisawa, JP;
Madoka Minagawa, Ebina, JP;
Naoya Kanda, Fujisawa, JP;
Ichiro Anjo, Tokyo, JP;
Asao Nishimura, Tokyo, JP;
Akira Yajima, Ebina, JP;
Kenji Ujiie, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor apparatus includes a semiconductor device having circuit electrodes aligned centrally of the semiconductor apparatus. A first electrically insulating layer is formed on said semiconductor device with said circuit electrodes being exposed from said first insulating layer. A second electrically insulating layer is formed on said first insulating layer, and external connection terminals are formed on said second insulating layer. A wiring is formed on said second insulating layer to electrically connect said external connect terminals to said circuit electrodes of said semiconductor device, and a third electrically insulating layer is formed on said second insulating layer and on said wiring. Particles are provided in the second insulating layer to control a shape of said second insulating layer.