The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2003
Filed:
Jun. 26, 2000
Tokyo Electron Limited, Tokyo, JP;
Abstract
A processing gas constituted of C F , O and Ar achieving a flow rate ratio of 1≦C F flow rate/O flow rate≦1.625 is supplied into a processing chamber of an etching apparatus and the atmosphere pressure is set within a range of 45 mTorr˜50 mTorr. High-frequency power is applied to a lower electrode sustained within a temperature range of 20° C.˜40° C. on which a wafer W is mounted to raise the processing gas to plasma, and using the plasma, a contact hole is formed at an SiO film on an SiNx film formed at the wafer W. The use of C F and O makes it possible to form a contact hole achieving near-perfect verticality at the SiO film and also improves the selection ratio of the SiO2 film relative to the SiNx film . C F , which becomes decomposed over a short period of time when released into the atmosphere, does not induce the greenhouse effect.