The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
May. 29, 2001
Leena P. Buchwalter, Hopewell Junction, NY (US);
Barbara Luther, Cold Spring, NY (US);
Paul D. Agnello, Wappingers Falls, NY (US);
John P. Hummel, Milbrook, NY (US);
Terence Lawrence Kane, Wappingers Falls, NY (US);
Dirk Karl Manger, Poughkeepsie, NY (US);
Paul Stephen McLaughlin, Poughkeepsie, NY (US);
Anthony Kendall Stamper, Williston, VT (US);
Yun Yu Wang, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.