The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Nov. 13, 2000
James Edward MacDougall, New Tripoli, PA (US);
Kevin Ray Heier, Macungie, PA (US);
Scott Jeffrey Weigel, Allentown, PA (US);
Timothy W. Weidman, Sunnyvale, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Nikolaos Bekiaris, San Jose, CA (US);
Yunfeng Lu, San Jose, CA (US);
Michael P. Nault, San Jose, CA (US);
Robert Parkash Mandal, Saratoga, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.