The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Feb. 07, 2002
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A plasma etching method for improving an aspect ratio including an etching profile including providing a substrate including an oxide containing insulating layer in a multilayer semiconductor device having at least a first underlying etching stop layer and at least a second etching stop layer overlying the oxide containing insulating layer; providing a patterned photoresist layer exposing an uppermost layer of the substrate for plasma etching; plasma etching through a thickness of at least a portion of the substrate; exposing the substrate to a polymerizing radiation source in at least a first curing process to initiate polymer cross-linking reactions; and plasma etching through at least another portion of a thickness of the substrate.